





A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8% PAE based on triple-tank power combiner @article{Liu2023A4C, title={A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8% PAE based on triple-tank power combiner}, author={Wangyu Liu and Zonglin Ma and Kaixue Ma and Hai-Hong Fu}, journal={IEICE Electron.



Measurements show a peak power gain of 15.3 dB at 83 GHz, with a 29.3% fractional bandwidth and less than 1-dB degradation over a 25 °C-85 °C temperature range. The peak output power at saturation and 1-dB compression is 18.6 and 13.6 dBm, respectively, and the maximum power-added efficiency (PAE) is 30.7%.



УБ хот, Хан-Уул дүүрэг, 15-р хороо, Махатма Гандигийн гудамж, ceo оффис, 5 давхар [email protected] +976-77440222



Abstract: This paper presents a 24–30 GHz broadband Doherty P A (DP A) in Infineon $0.13 mu mat{m}$ SiGe BiCMOS technology. A broadband transformer-based impedance inverter matching network (IIMN) is proposed and implemented to achieve simultaneous wide bandwidth and high efficiency within a compact size.



























—A +20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical (ISM) band is presented. The PA is fabricated in a 0.13-m SiGe BiCMOS process technology and features a fully-integrated on-chip RMS power detector for automatic level control (ALC), build-in self test and voltage standing wave ratio (VSWR) protection.



A high gain 83 GHz PA in 0.18 μm silicon–germanium (SiGe) BiCMOS process, which can deliver 14.7 dBm and 8.1% peak power added efficiency (PAE) is reported by using transmission-line current-combining technique. Transformer-based combiners are also popular in mm-wave PA design due to their high-power transfer efficiency and compact layout.





An efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an output power of 13 dBm in linear …




